Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures
نویسندگان
چکیده
منابع مشابه
Resonant tunneling in double-quantum-well triple-barrier heterostructures.
We present a low-temperature ~mK! magnetotransport study, using intense pulsed magnetic fields to 50 T, of two double GaAs quantum well, triple AlAs barrier resonant tunneling structures, which demonstrates the critical influence of the second quantum well on the tunneling behavior. We show that charge accumulation in the first well, and thus the overall tunneling characteristic, is controlled ...
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